Active cell structure for superjunction power device and manufacturing method thereof

• Main Authors: EMITA, YULIA HAPSARI, RAHUL, KUMAR, SHEU, GENE, YANG, SHAO-MING
• Format: Patent
• Language: Chinese; English
• Published: 16.02.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An active cell structure for superjunction power device comprises at least a substrate having a first conductivity type; a epitaxial layer having the first conductivity type located on the substrate; a trench located in the epitaxial layer; a first doping region having the first conductivity type located in the epitaxial layer, and adjacent to the bottom of the trench; a second doping region having a second conductivity type located in the epitaxial layer, and adjacent to the sidewall of the trench; a first oxide layer located in the trench; a gate conductive layer located on the epitaxial layer; an ion well having the second conductivity type located in the epitaxial layer, and partially contact the top surface of the second doping region and bottom of the gate conductive layer; a second oxide layer covered the gate conductive layer, and exposed the trench and the partial ion well; and a source conductive layer covered the second oxide layer, the ion well and the trench.