Semiconductor device

This semiconductor device comprises a first cell transistor (25) and a second cell transistor (27). The first cell transistor (25) includes: first and second side-wall-section channel regions (63, 64) that are arranged so as to sandwich a first groove (21); and a first bottom-section channel region...

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Bibliographic Details
Main Author HAMADA, KOJI
Format Patent
LanguageChinese
English
Published 01.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This semiconductor device comprises a first cell transistor (25) and a second cell transistor (27). The first cell transistor (25) includes: first and second side-wall-section channel regions (63, 64) that are arranged so as to sandwich a first groove (21); and a first bottom-section channel region (66) that is arranged between the bottom surface (21a) of the first groove (21) and an insulating layer (13-2). The second cell transistor (27) includes: the second side-wall-section channel region and a third side-wall-section channel region (64, 76) that are arranged so as to sandwich a second groove (22); and a second bottom-section channel region (77) that is arranged between the bottom surface (22a) of the second groove (22) and the insulating layer (13-2). The second cell transistor is provided in the same active region (19) as the first cell transistor (25).
Bibliography:Application Number: TW20143105214