Thin film transistor array

• Main Authors: CHUJO, HINA, MURATA, KODAI
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2014
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

The purpose of the present invention is to provide a thin film transistor array in which an alignment matching step performed during formation of a semiconductor layer can be shortened and the alignment of the semiconductor layer and a protective layer can be accurately matched, and to provide a method for manufacturing such a thin film transistor array, and an image display device. Provided is a thin film transistor array comprising the following: a substrate; a gate electrode formed on the substrate; a gate insulator layer formed on the substrate and the gate electrode; a source electrode and a drain electrode formed on the gate insulator layer; a semiconductor layer formed on the gate insulator layer and the source electrode, and the drain electrode; and a protective layer formed on the gate insulator layer and the source electrode, and the drain electrode and the semiconductor layer. The semiconductor layer and the protective layer form stripe shapes, with both edges on the long sides being mutually congr