Forming method of metal film, conductive ink, multilayer wiring substrate, semiconductor substrate, and capacitor cell of dynamic random access memory

• Main Authors: SHIMODA, SUGIROU, OOKITA, KENZOU, WATANABE, KAZUTO, TANAKA, KENROU, ARITOME, ISAO
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2014
• Subjects: ADHESIVES; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL PAINT OR INK REMOVERS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CORRECTING FLUIDS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FILLING PASTES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INKS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; PRINTED CIRCUITS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; USE OF MATERIALS THEREFOR; WOODSTAINS

A subject of the invention is to provide a method for forming a metal film on a surface of a substrate including holes, which is a simple method to easily form the metal film on the surface contacting the holes. A forming method of a metal film is characterized by including a step which heats the substrate including holes in a state that the surface of the substrate contacts a conductive ink containing a metal salt and a reducing agent, wherein the surface contacts the holes.