Manufacturing device for polycrystalline silicon ingot and method of manufacturing the same

• Main Author: HIWASA, SHOICHI
• Format: Patent
• Language: Chinese; English
• Published: 16.09.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS,e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USERAPPLICATIONS; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A manufacturing device for polycrystalline silicon ingot is provided, which includes: a crucible capable of storing silicon material; a heater disposed at the surrounding area of the crucible; a heat conductor configured under the crucible; and a cooling unit cooling the heat conductor. The characteristics of the manufacturing device of polycrystalline silicon ingot are: a cylindrical body opened at a lower part with a bottom is formed at the heat conductor, a bottom portion outer surface of the heat conductor and a bottom portion outer surface of the crucible are configured to face each other, and the vicinity of an opening end of the heat conductor is cooled by the cooling unit.