Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

In at least one embodiment, the method is designed for producing an optoelectronic semiconductor chip (1) and comprises the following steps: A) epitaxially growing a semiconductor layer sequence (3) on a growth substrate (2), B) applying a current spreading layer (4) composed of a transparent conduc...

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Bibliographic Details
Main Authors PERZLMAIER, KORBINIAN, TAEGER, SEBASTIAN
Format Patent
LanguageChinese
English
Published 01.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In at least one embodiment, the method is designed for producing an optoelectronic semiconductor chip (1) and comprises the following steps: A) epitaxially growing a semiconductor layer sequence (3) on a growth substrate (2), B) applying a current spreading layer (4) composed of a transparent conductive oxide to the semiconductor layer sequence (3), C) applying an etching mask (6) to the current spreading layer (4), D) patterning the current spreading layer (4) and the semiconductor layer sequence (3) by etching with the aid of the same etching mask (6), wherein a distance between an edge of the semiconductor layer sequence (3) and an edge of the current spreading layer (4) is at most 3 [mu]m.
Bibliography:Application Number: TW20130145269