Method of fabricating semiconductor sheet

• Main Author: LAN, CHUNG-WEN
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method of fabricating a semiconductor sheet. The method of the invention is, firstly, to form a molten semiconductor feedstock between a first mold and a second mold. The first mold provides a forming surface. Then, the method of the invention is to control at least one thermal parameter associated with the first mold and the second mold such that a plurality of semiconductor grains nucleate and grow from the molten semiconductor feedstock at the forming surface or the center of the first mold. Finally, the method of the invention is to continuously grow the plurality of semiconductor grains torward the second mold or from interior toward exterior until the whole of the molten semiconductor feedstock is solidified.