Semiconductor laser with improved current conduction

• Main Authors: EICHLER, CHRISTOPH, GERHARD, SVEN, AVRAMESCU, ADRIAN STEFAN, LERMER, TERESA, BRUEDERL, GEORG, STRAUSS, UWE
• Format: Patent
• Language: Chinese; English
• Published: 01.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention relates to a method for producing a semiconductor laser, and to a semiconductor laser (1) comprising a layer structure with superimposed layers with at least the following layer structure: a. an n-doped outer layer (10), b. a third wave-guiding layer (11), c. an active zone (6) in which light-generating structures are arranged, d. a second wave-guiding layer (13), e. a blocking layer (14), f. a first wave-guiding layer (15), g. a p-doped outer layer (16), the first, second and third wave-guiding layers (15, 13, 11) having at least AlxInyGa (1-x-y) N, x being able to assume values of between 0 and 1, y being able to assume values between 0 and 1, a sum of x and y being able to assume values of between 0 and 1, the blocking layer (14) having an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer (15), the Al content of the blocking layer (14) increasing from the first wave-guiding layer (15) towards the second wave-guiding layer (13), the layer stru