Method for preparing molten silicon melt using high pressure meltdown

• Main Authors: SREEDHARAMURTHY, HARIPRASAD, KIMBEL, STEVEN L, BONANNO, LUIGI, DIODA, MAURO, PORRINI, MARIA, AGOSTINI, GIORGIO
• Format: Patent
• Language: Chinese; English
• Published: 01.04.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for melting granular polysilicon in a crucible to reduce silicon splatter includes melting a quantity of polysilicon in the crucible at a first pressure and a first argon flow rate to the crucible to form molten silicon, increasing pressure from the first pressure to a second pressure, and increasing the first argon flow rate to a second argon flow rate. The method also includes supplying granular polysilicon into the crucible at the second pressure and the second argon flow rate and decreasing the pressure to a pressure less than the second pressure and decreasing the argon flow rate to an argon flow rate less than the second argon flow rate after supplying the granular polysilicon into the crucible.