Method for producing a silicon single crystal

• Main Authors: STEIN, WALDEMAR, BRENNINGER, GEORG, LOBMEYER, JOSEF
• Format: Patent
• Language: Chinese; English
• Published: 16.03.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for producing a silicon single crystal, comprising inductive heating of a silicon plate; melting granular silicon on the silicon plate; and feeding the molten silicon through a flow conduit in the center of the plate to a phase boundary, at which a silicon single cr...