Method for producing a silicon single crystal

The invention relates to a method for producing a silicon single crystal, comprising inductive heating of a silicon plate; melting granular silicon on the silicon plate; and feeding the molten silicon through a flow conduit in the center of the plate to a phase boundary, at which a silicon single cr...

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Bibliographic Details
Main Authors STEIN, WALDEMAR, BRENNINGER, GEORG, LOBMEYER, JOSEF
Format Patent
LanguageChinese
English
Published 16.03.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:The invention relates to a method for producing a silicon single crystal, comprising inductive heating of a silicon plate; melting granular silicon on the silicon plate; and feeding the molten silicon through a flow conduit in the center of the plate to a phase boundary, at which a silicon single crystal crystallizes, inductive heating of a silicon ring before the inductive heating of the plate, the ring lying on the plate and having a lower resistivity than the plate; and melting the ring.
Bibliography:Application Number: TW20130131508