Manufacturing method of epitaxial substrate and product thereof

• Main Authors: WU, DONG-XING, HONG, RUI-HUA, LIN, REING
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a manufacturing method of epitaxial substrate growing an epitaxial film structure on the substrate to constitute a vertical conduction LED. The epitaxial film structure is mainly composed of gallium nitride material. The manufacturing method comprises steps of: (a) forming a first bonding layer on a first surface of a first single crystal board body; (b) forming a second bonding layer on a first surface of a second single crystal board body; (c) bonding the first bonding layer and the second bonding layer into together to form an adhesive layer; and (d) thinning the second crystal board body on the second surface of the second single board body opposite to the first surface after performing the step (c), wherein the second surface of the second single crystal board body is used for growing the epitaxial film structure. The present invention also provides an epitaxial substrate through the said method.