Nitrogen oxide sensor and manufacturing method thereof

• Main Authors: LIU, WENAU, CHEN, HUEY, YOU, HE-WEI, CHANG, HSI-YEN, LIN, PING-JIA
• Format: Patent
• Language: Chinese; English
• Published: 01.02.2014
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

A nitrogen oxide sensor and a manufacturing method thereof are provided. The nitrogen oxide sensor includes: an epitaxial layer; an Ohmic electrode layer deposited on the epitaxial layer; a Schottky electrode layer deposited on the epitaxial layer and adjoining to the Ohmic electrode layer; and a catalytic organic monolayer constructed by alkanedithiol molecules and catalytic metal. The alkanedithiol molecules are arranged on the Schottky electrode layer in a self-assembly manner, and each has a head end bonded to the Schottky electrode layer and a distal end bonded to the catalytic metal. The nitrogen oxide sensor has higher sensitivity and selectivity, and is suitably operated at room temperature. Furthermore, the manufacturing method of the nitrogen oxide sensor has advantages of low temperature, low power consumption, and relatively easy steps.