Integrated structure of compound semiconductor devices

An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which...

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Bibliographic Details
Main Authors SYU, RONG-HAO, LI, SZU-JU, TSAI, SHU-HSIAO, LIN, CHENG-KUO
Format Patent
LanguageChinese
English
Published 16.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.
Bibliography:Application Number: TW20120121127