A monolithic compound semiconductor structure

A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epi-structure, an n-type etch stop layer, a p-type insertion layer, and an npn HBT epi-structure, and it can be used to form an FET, an HBT, or a tyristor.

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Bibliographic Details
Main Authors SYU, RONG-HAO, LI, SZU-JU, TSAI, SHU-HSIAO, LIN, CHENG-KUO
Format Patent
LanguageChinese
English
Published 16.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epi-structure, an n-type etch stop layer, a p-type insertion layer, and an npn HBT epi-structure, and it can be used to form an FET, an HBT, or a tyristor.
Bibliography:Application Number: TW20120121120