Critical dimension uniformity monitoring for extreme ultra-violet reticles

Disclosed are methods and apparatus for facilitating an inspection of a sample using an optical inspection tool. An optical inspection tool is used to obtain an optical image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is c...

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Bibliographic Details
Main Authors POKROVSKIY, ALEX, SOUSA, WESTON L, SEZGINER, ABDURRAHMAN, SHI, RUI-FANG
Format Patent
LanguageChinese
English
Published 16.12.2013
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:Disclosed are methods and apparatus for facilitating an inspection of a sample using an optical inspection tool. An optical inspection tool is used to obtain an optical image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.
Bibliography:Application Number: TW20132113834