Method of increasing carrier concentration in the epitaxial layer and structure thereof

• Main Authors: LI, FANG-YI, LIAO, HAN-ZHONG, ZHENG, WEI-GANG, LIN, YUNG, PAN, XI-MING
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method of increasing carrier concentration in the epitaxial layer and structure thereof, including the following steps: providing a substrate; forming a first semiconductor layer on the substrate; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; vapor depositing a metal material on the second semiconductor layer; heating the metal material and the second semiconductor layer so that part of the metal material and partial material of the second semiconductor layer are subjected to reaction for producing a compound comprising the metal and the second semiconductor material, thereby to increase the carrier concentration of the second semiconductor layer and to improve the light emitting efficiency of the epitaxial layer.