Method of manufacturing erasable programmable single-ploy nonvolatile memory

The present invention provides method of fabricating an erasable programmable single-poly nonvolatile memory, comprising steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gat...

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Bibliographic Details
Main Authors HSU, TE-HSUN, CHEN, HSIN-MING, CHEN, WEI-REN, CHING, WEN-HAO
Format Patent
LanguageChinese
English
Published 16.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides method of fabricating an erasable programmable single-poly nonvolatile memory, comprising steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gate oxide layer covered on a surface of the first area, wherein the second gate oxide layer is extended to and is adjacent to the second area; etching a portion of the second gate oxide layer above the second area; forming two polysilicon gates covered on the first and the second gate oxide layers; and defining a second type doped region in second area and a first type doped regions in the second type well region.
Bibliography:Application Number: TW20121144753