Semiconductor device and manufacturing method of a semiconductor device

• Main Authors: HUANG, YU-LING, TSENG, CHUNIAO, AI, CHUNG-YUNG, HUANG, CHUN-HUA, TANAKA, YOSHINORI, CHANG, WEI, FANG, HSUAN-YU, TAKESAKO, KAZUAKI, HSU, WEN-KUEI, NAGAI, YUKIHIRO, HSU, YU-SHAN, HSIUNG, CHIH-WEI, CHEN, MENG-HSIEN, KADOYA, TOMOHIRO, FUJITA, HIROTAKE, LIU, WEIIH
• Format: Patent
• Language: Chinese; English
• Published: 16.09.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device comprises: a substrate having a base and an array of semiconductor pillars extending upwardly from the base and arranged in rows, the substrate being formed with a plurality of trenches, each of which is disposed between two adjacent rows of the semiconductor pillars and each of which has two opposing trench side walls extending into the base; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which is formed in the base, each of which extends inwardly from the bit-forming surface of a respective one of the trench side walls of each of the trenches, and each of which is electrically coupled to an aligned one of the rows of the semiconductor pillars. The present invention also provides a method of making the semiconductor device.