Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device

The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plan...

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Bibliographic Details
Main Authors SARR, ABDOU, SCHEFFERS, PAUL IJMERT, MEIJER, JAN ANDRIES
Format Patent
LanguageChinese
English
Published 01.08.2013
Subjects
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Summary:The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (110) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.
Bibliography:Application Number: TW20121145845