Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plan...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.08.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (110) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system. |
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Bibliography: | Application Number: TW20121145845 |