Semiconductor device and method of manufacturing the same

A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thicknes...

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Bibliographic Details
Main Authors PARK, JONG-RYUK, SEO, JIN-WOOK, LEE, KI-YONG, CHUNG, YUN-MO
Format Patent
LanguageChinese
English
Published 16.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.
Bibliography:Application Number: TW20121120603