Bonding wire for semiconductor devices

A bonding wire for semiconductor devices and a method of manufacturing the same are disclosed. The bonding wire for semiconductor devices according to the present invention includes at least one selected from the group consisting of zinc (Zn), tin (Sn), and nickel (Ni) at 5 ppm to 10 wt%, and the re...

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Bibliographic Details
Main Authors CHUNG, EUN-KYUN, RYU, JAE-SUNG, TARK, YONG-DEOK
Format Patent
LanguageChinese
English
Published 16.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INSULATORS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
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Summary:A bonding wire for semiconductor devices and a method of manufacturing the same are disclosed. The bonding wire for semiconductor devices according to the present invention includes at least one selected from the group consisting of zinc (Zn), tin (Sn), and nickel (Ni) at 5 ppm to 10 wt%, and the remainder including silver (Ag) and other inevitable impurities.
Bibliography:Application Number: TW20121143571