Method for etching EUV reflective multi-material layers utilized to form a photomask

A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer dispose...

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Bibliographic Details
Main Authors GRIMBERGEN, MICHAEL, SABHARWAL, AMITABH, CHANDRACHOOD, MADHAVI, KUMAR, AJAY, YU, KEVEN KAISHENG
Format Patent
LanguageChinese
English
Published 01.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer disposed on a photomask includes providing a film stack in an etching chamber, the film stack having a multi-material layer having at least two different materials disposed therein partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas and an oxygen containing gas in to a processing chamber, supplying a RF power in the gas mixture to form a plasma, and etching the multi-material layer through the patterned layer.
Bibliography:Application Number: TW20121137765