Method of producing solar cell and solar cell

• Main Authors: ISHIZUKA, SHOGO, KAWAMOTO, YASUSHI, ODAKA, HIDEFUMI, NIKI, SHIGERU
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The present invention provides a method of producing solar cell capable of providing an excellent power generation efficiency. The present invention sequentially forms a lower electrode, a photo absorbing layer containing Cu, In, Ga and Se, a buffer layer, a transparent conductive layer and an upper electrode on a glass substrate, and the photo absorbing layer sequentially performs the following steps for the lower electrode: a first step of evaporating Se and Ga by setting the substrate temperature at 300-500 DEG C; a second step of evaporating Se and In by setting the substrate temperature at 300-500 DEG C; a third step of evaporating Se and Cu by raising the substrate temperature to 550-530 DEG C from the temperature in the second step; a fourth step of evaporating Se and In by setting the substrate temperature at 550-630 DEG C; and a fifth step of evaporating Se and Ga by setting the substrate temperature at 550-630 DEG C.