Self-aligned wet etch process

A self-aligned wet etch process is disclosed. Etching is carried out for a substrate with a surface provided with an etching protective layer for forming multiple separately arranged trenches. An insulating layer, an etching stop layer, and a main insulator are formed sequentially in the trenches so...

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Main Authors HUANG, YU-LING, ZHANG, WEI-ZHE, TANAKA, YOSHINORI, CHEN, MENG-XIAN, XU, WEN-GUI, FANG, XUAN-YU, LIU, WEI-ZHI, ZENG, JUN-QIAO, TAKESAKO, KAZUAKI, NAGAI, YUKIHIRO, XU, YU-SHAN, XIONG, ZHI-WEI, HUANG, JUN-HUA, KADOYA, TOMOHIRO, FUJITA, HIROTAKE, AI, QUN-YONG
Format Patent
LanguageChinese
English
Published 01.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A self-aligned wet etch process is disclosed. Etching is carried out for a substrate with a surface provided with an etching protective layer for forming multiple separately arranged trenches. An insulating layer, an etching stop layer, and a main insulator are formed sequentially in the trenches so that the main insulator is filled into a containing space formed by the etching stop layer. In the process of carrying out wet etching, the purpose of anisotropy wet etch for self-aligned etch can be achieved by utilizing the protection of the etching stop layer to avoid the main insulator from being etched. Simultaneously, contact area electrically connected to an external circuit is enlarged while the problem of short circuit for electrically contact body set at the contact area caused by over-etching the main insulator is avoided.
Bibliography:Application Number: TW20110139240