Method for fabricating semiconductor device

• Main Authors: CHIOU, CHUN-MAO, CHANG, CHUUN, LEE, CHIU-TE
• Format: Patent
• Language: Chinese; English
• Published: 16.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for fabricating semiconductor device is disclosed. The method includes the stepsof: providing a substrate having a gate structure thereon; forming a first cap layer on a surface of the substrate and sidewall of the gate structure; forming a second cap layer on the first cap layer; forming a third cap layer on the second cap layer; performing an etching process to partially remove the third cap layer, the second cap layer, and the first cap layer to form a first spacer and a second spacer on the sidewall of the gate structure; and forming a contact etch stop layer (CESL) on the substrate to cover the second spacer, wherein the third cap layer and the CESL comprise same deposition condition.