Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the stepsof: providing a substrate having a gate structure thereon; forming a first cap layer on a surface of the substrate and sidewall of the gate structure; forming a second cap layer on the first cap layer; forming a...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
16.04.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating semiconductor device is disclosed. The method includes the stepsof: providing a substrate having a gate structure thereon; forming a first cap layer on a surface of the substrate and sidewall of the gate structure; forming a second cap layer on the first cap layer; forming a third cap layer on the second cap layer; performing an etching process to partially remove the third cap layer, the second cap layer, and the first cap layer to form a first spacer and a second spacer on the sidewall of the gate structure; and forming a contact etch stop layer (CESL) on the substrate to cover the second spacer, wherein the third cap layer and the CESL comprise same deposition condition. |
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Bibliography: | Application Number: TW20110136755 |