Plasma nitrification method

• Main Authors: OSAKI, YOSHINORI, KURODA, TAKESHI
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The subject of the present invention increases the etching endurance of a silicon nitride film formed by a low temperature ALD process. The invention is a plasma nitrification method which utilizes a plasma processing apparatus (100) comprising: a processing container (1) having an opening at an upper part; a loading platform (2) loaded with a wafer (W); a microwave penetrable plate (28) for plugging the opening of the processing container (1) and allowing microwave to penetrate; and a planar antenna (31) having a plurality of slots for guiding microwave towards the inside of the processing container (1). Plasma processing gas including nitrogenous gas and rare gas is generated inside the processing container (1) to thereby treat the silicon nitride film on the wafer (W) with a plasma nitrification process. The silicon nitride film is formed under the film coating temperature below 400℃ through an ALD process, and the plasma nitrification process is carried out under a processing temperature whose ceiling is