A method for preparing indium sulfide thin film

• Main Authors: WU, CHUNG-SHIN, SHENG, PEI-SUN, WANG, YU-YUN
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2013
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for preparing indium sulfide film is provided. The method includes: providing a mixed solution of a complexing agent, indium ion, and hydrogen sulfide ion; and contacting the mixed solution with a substrate to form a indium sulfide film thereon; wherein the complexing agent has the following formula: wherein each of R1 and R2 respectively is hydrogen or hydroxyl.