Light-emitting diode structure and method for manufacturing the same

• Main Authors: TSAI, MING-JI, CHU, CHANG-HSIN, CHUANG, WEN-HUNG
• Format: Patent
• Language: Chinese; English
• Published: 16.12.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A light-emitting diode structure and a method for manufacturing the same are described. The light-emitting diode structure includes a substrate, an epitaxial structure, a metal resonance structure layer, a first electrode and a second electrode. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked on the substrate in sequence. The epitaxial structure includes a mesa located on a first portion of the first conductivity type semiconductor layer. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer are of different conductivity types. The metal resonance structure layer is at least disposed a portion of a sidewall of the mesa. The first electrode is disposed on a second portion of the first conductivity type semiconductor layer. The second electrode is disposed on the second conductivity type semiconductor layer.