Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window lay...

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Main Authors NISHIKAWA, YUKIE, YAMASAKI, HIRONORI, FURUKI, KATSUYOSHI, KATAOKA, TAKASHI
Format Patent
LanguageChinese
English
Published 01.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
Bibliography:Application Number: TW20110131708