Process for annealing semiconductor wafers with flat dopant depth profiles

A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having a...

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Bibliographic Details
Main Authors GILMORE, BRIAN LAWRENCE, SHIVE, LARRY WAYNE
Format Patent
LanguageChinese
English
Published 16.08.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.
Bibliography:Application Number: TW20110145643