Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a secon...

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Main Authors FUJII, TAKAYOSHI, KITAGAWA, TOSHITAKE, KATO, YUKO, SHIOZAWA, KAZUFUMI, SATO, TAISUKE, MORIOKA, TOMOKO, YASUDA, HIDEFUMI
Format Patent
LanguageChinese
English
Published 01.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
Bibliography:Application Number: TW20110123942