Thin film manufacturing method

A thin film manufacturing method employs high pressure spray effect to help evenly disperse droplets of pre-treating solution. The tube zone of a reaction furnace needs to be controlled at a specific temperature, and devised for appropriate reaction residence time in order to achieve complete reacti...

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Bibliographic Details
Main Authors CHENG, DA-LONG, CHIN, HUAI-SHAN, KAO, KUO-SHEG
Format Patent
LanguageChinese
English
Published 01.12.2011
Subjects
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
PERFORMING OPERATIONS
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
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Summary:A thin film manufacturing method employs high pressure spray effect to help evenly disperse droplets of pre-treating solution. The tube zone of a reaction furnace needs to be controlled at a specific temperature, and devised for appropriate reaction residence time in order to achieve complete reaction. A titanium dioxide film can then be formed on a wire electrode substrate, a mesh electrode substrate or a sheet electrode substrate. In this way, a wire electrode substrate, a mesh electrode substrate or a sheet electrode substrate with a surface covered with semiconductor titanium dioxide film can be continuously produced on a large scale to provide the advantage of substantially continuous industrial production and high utilization value in the industry.
Bibliography:Application Number: TW20100116361