Dry film photoresist and method of use in photolithography for semiconductor manufacture

An epoxy-based dry film photoresist and associated method afford excellent performance in imaging very fine lines of circuitry at the wafer level. This photoresist is effective as a tenting dry film in protecting vias and also in capping vias during processing at wafer level in semiconductor manufac...

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Bibliographic Details
Main Authors PIECHOCKI, ALEXANDER JOSEPH, JORGE, PEDRO GONCALO CARVALHAIS TEIXEIRA DIAS, YUN, HAO
Format Patent
LanguageChinese
English
Published 16.08.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:An epoxy-based dry film photoresist and associated method afford excellent performance in imaging very fine lines of circuitry at the wafer level. This photoresist is effective as a tenting dry film in protecting vias and also in capping vias during processing at wafer level in semiconductor manufacture. This epoxy-based photoresist has a low chlorine content.
Bibliography:Application Number: TW20100132211