Deposition method for insulating layer

• Main Authors: KOBAYASHI, MOTOSHI, TAKEI, MASAKI, KIYOTA, JUNYA, YUKAWA, TOMIYUKI, AKAMATSU, YASUHIKO
• Format: Patent
• Language: Chinese; English
• Published: 01.07.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a deposition method for insulating layer, by which insulating layers having excellent insulating property are deposited with high deposition rate. In a deposition method for insulating layer of one embodiment of the present invention, mixture gas of nitrogen and oxygen is used as reactive gas. By mixing nitrogen into oxygen, the deposition rate increases; and when the flow ratio of nitrogen is 80 to 85%, a maximized deposition rate could be achieved. If the flow rate of nitrogen is higher than 90%, the deposition rate drops remarkably. Silicon oxynitride layer resulted from the deposition method has better insulating pressure resisting property than that of silicon oxynitride layer deposited by sputtering. Therefore, according to the deposition method mentioned above, deposit insulating layers having excellent insulating property with high deposition rate by sputtering is possible.