High voltage sensor device and method therefor
In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. |
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Bibliography: | Application Number: TW200998145185 |