High voltage sensor device and method therefor

In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.

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Bibliographic Details
Main Authors BURTON, RICHARD S, QUDDUS, MOHAMMED TANVIR, CHANG, GEORGE, OIKAWA, KAZUNORI, HALL, JEFFERSON W
Format Patent
LanguageChinese
English
Published 01.04.2011
Subjects
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Summary:In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
Bibliography:Application Number: TW200998145185