Projection exposure apparatus for semiconductor lithography comprising an optical correction arrangement

The invention relates to an optical correction arrangement comprising at least one optical element (2), at least one irradiation means for the targeted local irradiation of the optical element (2) with electromagnetic heating radiation (7) for the targeted local heating of the optical element (2), w...

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Bibliographic Details
Main Authors KAZI, ARIF, BLEIDISTEL, SASCHA, CONRADI, OLAF
Format Patent
LanguageChinese
English
Published 01.01.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The invention relates to an optical correction arrangement comprising at least one optical element (2), at least one irradiation means for the targeted local irradiation of the optical element (2) with electromagnetic heating radiation (7) for the targeted local heating of the optical element (2), wherein means for dissipating the thermal energy introduced into the optical element (2) by the at least one irradiation means are present. The invention furthermore relates to a projection exposure apparatus for semiconductor lithography comprising an optical correction arrangement according to the invention.
Bibliography:Application Number: TW20100110702