Discontinuous/non-uniform metal cap structure and process for interconnect integration

An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuou...

Full description

Saved in:
Bibliographic Details
Main Authors HU, CHAO-KUN, YANG, CHIH CHAO, GIGNAC, LYNNE M, MITTAL, SURBHI
Format Patent
LanguageChinese
English
Published 16.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, eg, exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.
Bibliography:Application Number: TW200998130022