Semiconductor device and method for manufacturing the same

The invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device of the invention comprises a substrate, a tunneling layer, an HfGd Nanocrystal layer, a control oxide layer, and a Gate. The substrate comprises a source and a drain; the...

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Bibliographic Details
Main Authors HSU, LI, WANG, HUIUN, FANG, YUING, LAI, CHAO-SUNG, CHOU, PAII
Format Patent
LanguageChinese
English
Published 16.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device of the invention comprises a substrate, a tunneling layer, an HfGd Nanocrystal layer, a control oxide layer, and a Gate. The substrate comprises a source and a drain; the tunneling layer is formed on the substrate and in the space between source and drain; and the HfGd Nanocrystal layer is formed on the tunneling layer, and more particular, the HfGd Nanocrystal layer comprises a plurality of nanocrystals. Additionally, the control oxide layer is formed on the HfGd Nanocrystal layer and the Gate is formed on the control oxide layer.
Bibliography:Application Number: TW20080146837