Thermal modulation of implant process

A method for ion implantation is disclosed which includes modulating the temperature of the substrate during the implant process. This modulation affects the properties of the substrate, and can be used to minimize EOR defects, selectively segregate and diffuse out secondary dopants, maximize or min...

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Bibliographic Details
Main Author RAMAPPA, DEEPAK
Format Patent
LanguageChinese
English
Published 16.05.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for ion implantation is disclosed which includes modulating the temperature of the substrate during the implant process. This modulation affects the properties of the substrate, and can be used to minimize EOR defects, selectively segregate and diffuse out secondary dopants, maximize or minimize the amorphous region, and vary other semiconductor parameters. In one particular embodiment, a combination of temperature modulated ion implants are used. Ion implantation at higher temperatures is used in sequence with regular baseline processing and with ion implantation at cold temperatures. The temperature modulation could be at the beginning or at the end of the process to alleviate the detrimental secondary dopant effects.
Bibliography:Application Number: TW200998133394