Semiconductor device and method for manufacturing the same

The present invention provides a semiconductor device of which the warp due to heat in use is inhibited so as to improve the reliality thereof. In a large current transistor, the peeling off of a resist layer used as a mask for plating and the poor formation of a surface electrode are prevented. A s...

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Bibliographic Details
Main Author OIKAWA, TAKAHIRO
Format Patent
LanguageChinese
English
Published 16.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a semiconductor device of which the warp due to heat in use is inhibited so as to improve the reliality thereof. In a large current transistor, the peeling off of a resist layer used as a mask for plating and the poor formation of a surface electrode are prevented. A source connection electrode 18 connected to source area is formed on the surface of semiconductor substrate 10, which constitutes a vertical type MOS transistor. The source connection electrode 18 is provided with a surface electrode 23, which is formed by plating, a bump 31 is connected thereto and is covered by a protection film 26 from which the bump electrode 31 is exposed. On the other hand, the back side of the semiconductor substrate 10 is formed with a back electrode 30 being in connection with drain area. The surface electrode 23 and the back electrode 30 are made of a metal having the same linear expansion coefficient, preferably copper. They also preferably have the same or substantially the same thicknes
Bibliography:Application Number: TW20090131857