Method of manufacturing optical filter

• Main Authors: SATO, TOSHIHIKO, JIANG, YOU-SONG, SHIONO, ICHIRO, TOGASHI, YASUHISA, SUGAWARA, TAKUYA
• Format: Patent
• Language: Chinese; English
• Published: 01.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a method of manufacturing an optical filter having excellent film quality in which extraneous matters adhered to the surface of a substrate are removed by cleaning before formation of a thin film. It is possible to effectively remove extraneous matters adhered to the surface of a substrate (S) by executing a cleaning process (P1) in which the substrate (S) is cleaned by using a solution containing water, a pretreatment process (P3) in which a plasma treatment using plasma of oxygen gas is performed on the surface of the substrate (S) cleaned in the cleaning process (P), and a thin film formation process (P4, P5) in which a thin film is formed on the surface of the substrate ASH having been subjected to the plasma treatment in the pretreatment process (P3). In the pretreatment process (Pay by introducing only the oxygen gas in an area wherein the plasma is generated and setting the flow rate of introduced oxygen gas larger than the flow rate of oxygen gas to be introduced in the thin film formation