Etching process for sapphire substrate and patterned sapphire substrate

• Main Authors: CHENG, CHI-HAO, HO, SUZ-HUA, WU, SERMON YEWUNG, HSU, WENING, LIN, BO-WEN, QIU, WEI-ZHE, YANG, KUN-LIN
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses an etching process for a sapphire substrate and a patterned sapphire substrate. The sapphire substrate has an upper surface with a crystalline orientation of (0001), and plural complete pyramid structures protrude from the upper surface. Each pyramid structure has a first crystalline surface with an orientation of (1012), a second crystalline surface with an orientation of (0112), and a third crystalline surface with an orientation of (1102). The complete pyramid structures are formed by a first etching liquid etching portions of the upper surface to form plural flat-top pyramid structures in the upper surface, and then by a second etching liquid further etching the portions of the upper surface, such that the complete pyramid structures are formed from the flat-top pyramid structures.