A room temperature wafer bonding apparatus and a room temperature wafer bonding method

• Main Authors: GOTO, TAKAYUKI, TSUNO, TAKESHI, IDE, KENSUKE, TAWARA, SATOSHI, SUZUKI, TAKENORI, KINOUCHI, MASATO, UTSUMI, JUN
• Format: Patent
• Language: Chinese; English
• Published: 16.08.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

The room temperature wafer bonding apparatus has an exhaust system, a gas feeder, a manometer, an activating unit, a pressure controller, and a bonding mechanism. The exhaust system exhausts air from inside of a chamber. The gas feeder supplies gas into the chamber. The manometer measures a pressure inside the chamber. The activating unit activates a first wafer and a second wafer in a vacuum state in the chamber. The pressure controller controls both of the exhaust system and the gas feeder to equalize the measured pressure to a target pressure. The bonding mechanism bonds the first wafer to the second wafer in the chamber, when the measured pressure is equal to the target pressure.