Method for manufacturing an integrated circuit and semiconductor structures of the integrated circuit

The present invention discloses a method for manufacturing an integrated circuit. The method includes: performing ion implantation on a wafer to make a chip in the wafer have an original doping concentration; dividing the chip into a plurality of regions; and controlling at least one region of plura...

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Bibliographic Details
Main Authors LIN, CHIEN-MING, CHENG, RUI-HUANG, YU, CHI-LU, HUANG, RUEI-HAO
Format Patent
LanguageChinese
English
Published 01.07.2009
Subjects
ADVERTISING
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
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Summary:The present invention discloses a method for manufacturing an integrated circuit. The method includes: performing ion implantation on a wafer to make a chip in the wafer have an original doping concentration; dividing the chip into a plurality of regions; and controlling at least one region of plurality of the regions not to have further ion implantation performed thereon, thereby making the region only have single ion implantation performed thereon to utilize the original doping concentration as a doping concentration of N-wells or P-wells of transistors in the region. Additionally, the region corresponds to signal output circuits of the integrated circuit.
Bibliography:Application Number: TW20070150897