An ion beam guide tube

The present invention relates to ion implanters, and in particular to the guide tube for an ion beam in an ion implanter which is located in the implanter adjacent a semiconductor wafer being implanted. Such guide tubes are provided primarily to confine charged particles used for wafer neutralisatio...

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Bibliographic Details
Main Authors HILKENE, MARTIN, MITCHELL, ROBERT, FARLEY, MARVIN, RYDING, GEOFFREY, ALCOTT, GREGORY ROBERT, CASTLE, MATTHEW, SPRAGGON, LEE
Format Patent
LanguageChinese
English
Published 16.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:The present invention relates to ion implanters, and in particular to the guide tube for an ion beam in an ion implanter which is located in the implanter adjacent a semiconductor wafer being implanted. Such guide tubes are provided primarily to confine charged particles used for wafer neutralisation during implantation. Advantageously, the guide tube has an outwardly tapering central bore thereby alleviating problems of beam strike as the ion beam passes through the guide tube.
Bibliography:Application Number: TW20080138417