Photovoltaic module comprising layer with conducting spots

The invention pertains to a photovoltaic (PV) module comprising a plurality of cells, each cell containing a substrate, a transparent conductor layer, a photovoltaic layer, and a back-electrode layer, wherein the photovoltaic layer comprises at least one p-i-n or n-i-p silicon layer, characterized i...

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Bibliographic Details
Main Authors SPORTEL, EDWIN PETER, DUBBELDAM, GERRIT CORNELIS
Format Patent
LanguageChinese
English
Published 16.02.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention pertains to a photovoltaic (PV) module comprising a plurality of cells, each cell containing a substrate, a transparent conductor layer, a photovoltaic layer, and a back-electrode layer, wherein the photovoltaic layer comprises at least one p-i-n or n-i-p silicon layer, characterized in that said silicon layer comprises 10 to 1000 conducting spots of recrystallized silicon per cm2, each having independently a surface of 10 to 2500 μ m2. The PV module can be obtained by a method wherein the p-i-n or n-i-p silicon layer is locally heated whereby said silicon is transformed at these spots, after which the silicon at these spots is allowed to solidify in a transformed state.
Bibliography:Application Number: TW200897115481