Hardmask composition having antireflective properties and method of patterning material using the same

A hardmask composition having antireflective properties is provided. The hardmask composition is suitable for lithography, provides excellent optical and mechanical properties, and exhibits high etch selectivity. In addition, the hardmask composition can be readily applied by spin-on application tec...

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Bibliographic Details
Main Authors UH, DONG-SEON, TOKAREVA, NATALIYA, LEE, JIN KUK, KIM, MIN-SOO, CHEON, HWAN SUNG, HYUNG, KYUNG-HEE, NAM, IRINA, YOON, KYONG-HO, KIM, JONG SEOB, OH, CHANG-IL
Format Patent
LanguageChinese
English
Published 16.02.2009
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:A hardmask composition having antireflective properties is provided. The hardmask composition is suitable for lithography, provides excellent optical and mechanical properties, and exhibits high etch selectivity. In addition, the hardmask composition can be readily applied by spin-on application techniques. Advantageously, the hardmask composition is useful for short-wavelength lithography and has a minimum residual acid content.
Bibliography:Application Number: TW20080111973