Thin-film semiconductor device and its manufacturing method
To provide a manufacturing method of a thin-film semiconductor device capable of keeping an interface between a gate insulation film and a thin-film conductor layer under good conditions free from the influence of formation of a source/drain electrode and thereby having a fine bottom-gate-bottom-con...
Saved in:
Main Authors | , , , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
16.01.2009
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!