Thin-film semiconductor device and its manufacturing method

• Main Authors: AOYAGI, YOSHINOBU, YASUDA, RYOICHI, YAGI, IWAO, MINARI, TAKEO, TSUKAGOSHI, KAZUHITO, NOMOTO, KAZUMASA, HIRAI, NOBUKAZU
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a thin-film semiconductor device capable of keeping an interface between a gate insulation film and a thin-film conductor layer under good conditions free from the influence of formation of a source/drain electrode and thereby having a fine bottom-gate-bottom-con...