Thin-film semiconductor device and its manufacturing method

• Main Authors: AOYAGI, YOSHINOBU, YASUDA, RYOICHI, YAGI, IWAO, MINARI, TAKEO, TSUKAGOSHI, KAZUHITO, NOMOTO, KAZUMASA, HIRAI, NOBUKAZU
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a thin-film semiconductor device capable of keeping an interface between a gate insulation film and a thin-film conductor layer under good conditions free from the influence of formation of a source/drain electrode and thereby having a fine bottom-gate-bottom-contact type thin-film transistor structure with good characteristics. A first gate insulation film 7-1 is formed to cover a gate electrode 5 formed on a substrate 3, and a pair of source/drain electrodes 9 is formed on the first gate insulation film 7-1. Thereafter, a second gate insulation film 7-2 is selectively formed only on the first gate insulation film 7-1 exposed from the electrodes 9. Then, a thin-film semiconductor layer 11 continuously covering up to the first gate insulation film 7-1 from the source-drain electrodes 9 via the second gate insulation film 7-2 in contact with the electrodes 9 is formed, thereby manufacturing the thin-film semiconductor device 1.